代码收藏家 STM32H库内部FLASH读写操作及结构体数组数据的写入与读取技巧
stm32H库的内部FLASH读写操作与结构体数组数据写入与读取
参考博主-STM32系列(HAL库)——内部FLASH读写实验
1.软硬件准备
软件：CubeMX、SSCOM（串口调试助手）
硬件：SMT32F103C8T6
2.关于STM32的Flash的一些说明
(1)STM32根据闪存（Flash）容量的大小，将Flash分为每页1K字节 或 每页2K字节。超过256K容量的每页为2K字节。对于本次使用的SMT32F103C8T6，其容量为64K，则内部分为每页1K字节
(2)SMT32的Flash起始地址为0X0800 0000 。本次使用的STM32F103C8T6的FLASH范围是0X08000000-0X0800FFFF。示意图如下
(3)STM32运行代码从地址0X0800 0000开始，所以我们使用的Flash空间开始地址应该往后偏移，不然就会将程序部分覆盖掉。
(4)Flash的写操作，需要擦除一整页后再重新写入，不能对特定处进行修改，写的时候可以分多次写入
(5)擦写次数较多数据的不建议使用内部Flash进行存储，手册中给的数据是擦写1W次
3.STM32配置及主要代码
CubeMX简单配置一个串口1即可，usart.c添加打印函数，即
#include "stdio.h"
/*********************************************************
*
*重定义 fputc 函数
*
*********************************************************/
int fputc(int ch,FILE *f)
{
HAL_UART_Transmit (&huart1 ,(uint8_t *)&ch,1,HAL_MAX_DELAY );
return ch;
}
main.c
创建一个结构体FuyuState，结构体下的变量随便赋值后经过FLASH写入后，读出出该地址的值赋值给另外一个数值datatemp，再通过打印输出查看是否正确
/* USER CODE BEGIN Header */
/**
******************************************************************************
* @file : main.c
* @brief : Main program body
******************************************************************************
* @attention
*
* <h2><center>© Copyright (c) 2022 STMicroelectronics.
* All rights reserved.</center></h2>
*
* This software component is licensed by ST under BSD 3-Clause license,
* the "License"; You may not use this file except in compliance with the
* License. You may obtain a copy of the License at:
* opensource.org/licenses/BSD-3-Clause
*
******************************************************************************
*/
/* USER CODE END Header */
/* Includes ------------------------------------------------------------------*/
#include "main.h"
#include "usart.h"
#include "gpio.h"
/* Private includes ----------------------------------------------------------*/
/* USER CODE BEGIN Includes */
#include "stmflash.h"
#include "stdio.h"
/* USER CODE END Includes */
/* Private typedef -----------------------------------------------------------*/
/* USER CODE BEGIN PTD */
const u8 TEXT_Buffer_1[]={"STM32 FLASH TEST_1"};//要写入到STM32 FLASH的字符串数组
const u8 TEXT_Buffer_2[]={"STM32 FLASH TEST_2"};//要写入到STM32 FLASH的字符串数组
#define SIZE sizeof(TEXT_Buffer_1) //数组长度
/* USER CODE END PTD */
/* Private define ------------------------------------------------------------*/
/* USER CODE BEGIN PD */
/* USER CODE END PD */
/* Private macro -------------------------------------------------------------*/
/* USER CODE BEGIN PM */
typedef __packed struct
{
u16 Set_Temperature; //设置温度 = 保持温度
u16 SetTime; //设置时间
u16 CurrentTemp[3]; //当前温度
u16 ProtectTemp[3]; //保护温度
u16 Speed;
u32 RemainTime;
u16 Current;
u16 PWM_Time;
u8 ActiveState;
} FuyuState,*pFuyuState;
FuyuState g_FuyuState= {0};
/* USER CODE END PM */
/* Private variables ---------------------------------------------------------*/
/* USER CODE BEGIN PV */
/* USER CODE END PV */
/* Private function prototypes -----------------------------------------------*/
void SystemClock_Config(void);
/* USER CODE BEGIN PFP */
/* USER CODE END PFP */
/* Private user code ---------------------------------------------------------*/
/* USER CODE BEGIN 0 */
/* USER CODE END 0 */
/**
* @brief The application entry point.
* @retval int
*/
int main(void)
{
/* USER CODE BEGIN 1 */
u16 datatemp[20]; //Flash读取缓存数组
u16 *p=datatemp; //数组指针
/* USER CODE END 1 */
u8 i;
/* MCU Configuration--------------------------------------------------------*/
/* Reset of all peripherals, Initializes the Flash interface and the Systick. */
HAL_Init();
/* USER CODE BEGIN Init */
/* USER CODE END Init */
/* Configure the system clock */
SystemClock_Config();
/* USER CODE BEGIN SysInit */
/* USER CODE END SysInit */
/* Initialize all configured peripherals */
MX_GPIO_Init();
MX_USART1_UART_Init();
/* USER CODE BEGIN 2 */
printf("串口打印正常!\r\n");
//结构体变量赋值
g_FuyuState.Set_Temperature = 50; //设置温度 = 保持温度
g_FuyuState.SetTime = 2 ;
g_FuyuState.CurrentTemp[0] = 3 ;
g_FuyuState.CurrentTemp[1] = 4 ;
g_FuyuState.CurrentTemp[2] = 5 ;
g_FuyuState.ProtectTemp[0] = 6 ;
g_FuyuState.ProtectTemp[1] = 7 ;
g_FuyuState.ProtectTemp[2] = 8 ;
g_FuyuState.Speed = 5;
g_FuyuState.RemainTime = 6;
g_FuyuState.Current = 7;
g_FuyuState.PWM_Time = 8;
g_FuyuState.ActiveState = 9;
STMFLASH_Write(FLASH_SAVE_ADDR,(uint16_t*)&g_FuyuState,sizeof(g_FuyuState));//第一次写
HAL_Delay(50);
STMFLASH_Read(FLASH_SAVE_ADDR,(uint16_t*)datatemp,sizeof(g_FuyuState));
for(i=0;i<sizeof(g_FuyuState);i++)
{
printf("datatemp%d:%d\r\n",i,datatemp[i]);
}
//STMFLASH_Write(FLASH_SAVE_ADDR,(u16*)TEXT_Buffer_1,SIZE);//第一次写读
//STMFLASH_Read(FLASH_SAVE_ADDR,(u16*)datatemp,SIZE);
//printf("%s\r\n",p);
//STMFLASH_Write(FLASH_SAVE_ADDR,(u16*)TEXT_Buffer_2,SIZE);//第二次写读
//STMFLASH_Read(FLASH_SAVE_ADDR,(u16*)datatemp,SIZE);
//printf("%s\r\n",p);
/* USER CODE END 2 */
/* Infinite loop */
/* USER CODE BEGIN WHILE */
while (1)
{
/* USER CODE END WHILE */
/* USER CODE BEGIN 3 */
}
/* USER CODE END 3 */
}
/**
* @brief System Clock Configuration
* @retval None
*/
void SystemClock_Config(void)
{
RCC_OscInitTypeDef RCC_OscInitStruct = {0};
RCC_ClkInitTypeDef RCC_ClkInitStruct = {0};
/** Initializes the RCC Oscillators according to the specified parameters
* in the RCC_OscInitTypeDef structure.
*/
RCC_OscInitStruct.OscillatorType = RCC_OSCILLATORTYPE_HSE;
RCC_OscInitStruct.HSEState = RCC_HSE_ON;
RCC_OscInitStruct.HSEPredivValue = RCC_HSE_PREDIV_DIV1;
RCC_OscInitStruct.HSIState = RCC_HSI_ON;
RCC_OscInitStruct.PLL.PLLState = RCC_PLL_ON;
RCC_OscInitStruct.PLL.PLLSource = RCC_PLLSOURCE_HSE;
RCC_OscInitStruct.PLL.PLLMUL = RCC_PLL_MUL9;
if (HAL_RCC_OscConfig(&RCC_OscInitStruct) != HAL_OK)
{
Error_Handler();
}
/** Initializes the CPU, AHB and APB buses clocks
*/
RCC_ClkInitStruct.ClockType = RCC_CLOCKTYPE_HCLK|RCC_CLOCKTYPE_SYSCLK
|RCC_CLOCKTYPE_PCLK1|RCC_CLOCKTYPE_PCLK2;
RCC_ClkInitStruct.SYSCLKSource = RCC_SYSCLKSOURCE_PLLCLK;
RCC_ClkInitStruct.AHBCLKDivider = RCC_SYSCLK_DIV1;
RCC_ClkInitStruct.APB1CLKDivider = RCC_HCLK_DIV2;
RCC_ClkInitStruct.APB2CLKDivider = RCC_HCLK_DIV1;
if (HAL_RCC_ClockConfig(&RCC_ClkInitStruct, FLASH_LATENCY_2) != HAL_OK)
{
Error_Handler();
}
}
/* USER CODE BEGIN 4 */
/* USER CODE END 4 */
/**
* @brief This function is executed in case of error occurrence.
* @retval None
*/
void Error_Handler(void)
{
/* USER CODE BEGIN Error_Handler_Debug */
/* User can add his own implementation to report the HAL error return state */
__disable_irq();
while (1)
{
}
/* USER CODE END Error_Handler_Debug */
}
#ifdef USE_FULL_ASSERT
/**
* @brief Reports the name of the source file and the source line number
* where the assert_param error has occurred.
* @param file: pointer to the source file name
* @param line: assert_param error line source number
* @retval None
*/
void assert_failed(uint8_t *file, uint32_t line)
{
/* USER CODE BEGIN 6 */
/* User can add his own implementation to report the file name and line number,
ex: printf("Wrong parameters value: file %s on line %d\r\n", file, line) */
/* USER CODE END 6 */
}
#endif /* USE_FULL_ASSERT */
/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/
stmflash.h
#ifndef __STMFLASH_H__
#define __STMFLASH_H__
#include "main.h"
//=========================数据类型宏定义
#define u8 uint8_t
#define u16 uint16_t
#define u32 uint32_t
#define __IO volatile
typedef __IO uint16_t vu16;
//=========================用户根据自己的需要设置
#define STM32_FLASH_SIZE 64 //所选STM32的FLASH容量大小(单位为K)
#if STM32_FLASH_SIZE < 256 //设置扇区大小
#define STM_SECTOR_SIZE 1024 //1K字节
#else
#define STM_SECTOR_SIZE 2048 //2K字节
#endif
#define STM32_FLASH_BASE 0x08000000 //STM32 FLASH的起始地址
#define FLASH_SAVE_ADDR STM32_FLASH_BASE+STM_SECTOR_SIZE*62 //写Flash的地址，这里从倒数第二页开始
#define STM32_FLASH_WREN 1 //使能FLASH写入(0，不是能;1，使能)
#define FLASH_WAITETIME 50000 //FLASH等待超时时间
u8 STMFLASH_GetStatus(void); //获得状态
u8 STMFLASH_WaitDone(u16 time); //等待操作结束
u8 STMFLASH_ErasePage(u32 paddr); //擦除页
u8 STMFLASH_WriteHalfWord(u32 faddr, u16 dat);//写入半字
u16 STMFLASH_ReadHalfWord(u32 faddr); //读出半字
void STMFLASH_WriteLenByte(u32 WriteAddr,u32 DataToWrite,u16 Len); //指定地址开始写入指定长度的数据
u32 STMFLASH_ReadLenByte(u32 ReadAddr,u16 Len); //指定地址开始读取指定长度数据
void STMFLASH_Write(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite); //从指定地址开始写入指定长度的数据
void STMFLASH_Read(u32 ReadAddr,u16 *pBuffer,u16 NumToRead); //从指定地址开始读出指定长度的数据
void Flash_PageErase(uint32_t PageAddress); //扇区擦除
#endif
stmflash.c
#include "stmflash.h"
FLASH_ProcessTypeDef p_Flash;
u16 STMFLASH_BUF[STM_SECTOR_SIZE/2]; //缓存数组
/**********************************************************************************
* 函数功能: 读取指定地址的半字(16位数据)
* 输入参数: faddr：读地址
* 返 回 值: 对应数据
* 说 明：
*/
u16 STMFLASH_ReadHalfWord(u32 faddr)
{
return *(vu16*)faddr;
}
#if STM32_FLASH_WREN //如果使能了写
/**********************************************************************************
* 函数功能:不检查的写入
* 输入参数: WriteAddr:起始地址、pBuffer:数据指针、NumToWrite:半字(16位)数
* 返 回 值: 无
* 说 明：
*/
void STMFLASH_Write_NoCheck(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite)
{
u16 i;
for(i=0;i<NumToWrite;i++)
{
HAL_FLASH_Program(FLASH_TYPEPROGRAM_HALFWORD,WriteAddr,pBuffer[i]);
WriteAddr+=2;//地址增加2.
}
}
/**********************************************************************************
* 函数功能:从指定地址开始写入指定长度的数据
* 输入参数:WriteAddr:起始地址(此地址必须为2的倍数!!)、pBuffer:数据指针、NumToWrite：半字(16位)数(就是要写入的16位数据的个数.)
* 返 回 值: 无
* 说 明：
*/
void STMFLASH_Write(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite)
{
u32 secpos; //扇区地址
u16 secoff; //扇区内偏移地址(16位字计算)
u16 secremain; //扇区内剩余地址(16位字计算)
u16 i;
u32 offaddr; //去掉0X08000000后的地址
if(WriteAddr<STM32_FLASH_BASE||(WriteAddr>=(STM32_FLASH_BASE+1024*STM32_FLASH_SIZE)))return;//非法地址
HAL_FLASH_Unlock(); //解锁
offaddr=WriteAddr-STM32_FLASH_BASE; //实际偏移地址.
secpos=offaddr/STM_SECTOR_SIZE; //扇区地址 0~64 for STM32F103C8T6
secoff=(offaddr%STM_SECTOR_SIZE)/2; //在扇区内的偏移(2个字节为基本单位.)
secremain=STM_SECTOR_SIZE/2-secoff; //扇区剩余空间大小
if(NumToWrite<=secremain)secremain=NumToWrite;//不大于该扇区范围
while(1)
{
STMFLASH_Read(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//读出整个扇区的内容
for(i=0;i<secremain;i++) //校验数据
{
if(STMFLASH_BUF[secoff+i]!=0XFFFF)break;//需要擦除
}
if(i<secremain) //需要擦除
{
Flash_PageErase(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE); //擦除这个扇区
FLASH_WaitForLastOperation(FLASH_WAITETIME); //等待上次操作完成
CLEAR_BIT(FLASH->CR, FLASH_CR_PER); //清除CR寄存器的PER位，此操作应该在FLASH_PageErase()中完成！
//但是HAL库里面并没有做，应该是HAL库bug！
for(i=0;i<secremain;i++)//复制
{
STMFLASH_BUF[i+secoff]=pBuffer[i];
}
STMFLASH_Write_NoCheck(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//写入整个扇区
}else
{
FLASH_WaitForLastOperation(FLASH_WAITETIME); //等待上次操作完成
STMFLASH_Write_NoCheck(WriteAddr,pBuffer,secremain);//写已经擦除了的,直接写入扇区剩余区间.
}
if(NumToWrite==secremain)break;//写入结束了
else//写入未结束
{
secpos++; //扇区地址增1
secoff=0; //偏移位置为0
pBuffer+=secremain; //指针偏移
WriteAddr+=secremain*2; //写地址偏移(16位数据地址,需要*2)
NumToWrite-=secremain; //字节(16位)数递减
if(NumToWrite>(STM_SECTOR_SIZE/2))secremain=STM_SECTOR_SIZE/2;//下一个扇区还是写不完
else secremain=NumToWrite;//下一个扇区可以写完了
}
};
HAL_FLASH_Lock(); //上锁
}
#endif
/**********************************************************************************
* 函数功能:从指定地址开始读出指定长度的数据
* 输入参数:ReadAddr:起始地址、pBuffer:数据指针、NumToWrite:半字(16位)数
* 返 回 值: 无
* 说 明：
*/
void STMFLASH_Read(u32 ReadAddr,u16 *pBuffer,u16 NumToRead)
{
u16 i;
for(i=0;i<NumToRead;i++)
{
pBuffer[i]=STMFLASH_ReadHalfWord(ReadAddr);//读取2个字节.
ReadAddr+=2;//偏移2个字节.
}
}
/**********************************************************************************
* 函数功能:擦除扇区
* 输入参数:PageAddress:擦除扇区地址
* 返 回 值: 无
* 说 明：
*/
void Flash_PageErase(uint32_t PageAddress)
{
/* Clean the error context */
p_Flash.ErrorCode = HAL_FLASH_ERROR_NONE;
#if defined(FLASH_BANK2_END)
if(PageAddress > FLASH_BANK1_END)
{
/* Proceed to erase the page */
SET_BIT(FLASH->CR2, FLASH_CR2_PER);
WRITE_REG(FLASH->AR2, PageAddress);
SET_BIT(FLASH->CR2, FLASH_CR2_STRT);
}
else
{
#endif /* FLASH_BANK2_END */
/* Proceed to erase the page */
SET_BIT(FLASH->CR, FLASH_CR_PER);
WRITE_REG(FLASH->AR, PageAddress);
SET_BIT(FLASH->CR, FLASH_CR_STRT);
#if defined(FLASH_BANK2_END)
}
#endif /* FLASH_BANK2_END */
}
3.实验结果
